publications

publications by categories in reversed chronological order.

2022

  1. ACS
    MOCVD Growth and Characterization of Be-Doped GaN
    McEwen, Benjamin, Reshchikov, Michael A, Rocco, Emma, Meyers, Vincent, Hogan, Kasey, Andrieiev, Oleksandr,  Vorobiov, Mykhailo, Demchenko, Denis O, and Shahedipour-Sandvik, Fatemeh
    ACS Applied Electronic Materials 2022
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  2. PhysRevB
    Photoluminescence related to Ca in GaN
    Reshchikov, M. A., Demchenko, D. O.,  Vorobiov, M., Andrieiev, O., McEwen, B., Shahedipour-Sandvik, F., Sierakowski, K., Jaroszynski, P., and Bockowski, M.
    Phys. Rev. B Jul 2022
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  3. JAP
    Thermal annealing of GaN implanted with Be
    Reshchikov, MA, Andrieiev, O, Vorobiov, M, Ye, D, Demchenko, DO, Sierakowski, K, Bockowski, M, McEwen, B, Meyers, V, and Shahedipour-Sandvik, F
    Journal of Applied Physics Jul 2022
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  4. SPIE
    Toward highly efficient p-doping in III-nitride optoelectronics: MOCVD growth of Be-doped GaN
    McEwen, Benjamin, Reshchikov, Michael, Rocco, Emma, Meyers, Vincent, Hogan, Kasey, Andrieiev, Oleksandr,  Vorobiov, Mykhailo, Demchenko, Denis, and Shahedipour-Sandvik, Shadi
    In Gallium Nitride Materials and Devices XVII Jul 2022
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  5. JAP
    The effect of annealing on photoluminescence from defects in ammonothermal GaN
    Reshchikov, MA, Demchenko, DO, Ye, D, Andrieiev, O, Vorobiov, M, Grabianska, K, Zajac, M, Nita, P, Iwinska, M, Bockowski, M, and others,
    Journal of Applied Physics Jul 2022
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2021

  1. PhysRevB
    Point defects in beryllium-doped GaN
    Vorobiov, Mykhailo, Andrieiev, Oleksandr, Demchenko, Denis O., and Reshchikov, Michael A.
    Phys. Rev. B Dec 2021
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  2. PSS
    Stability of the C_NH_i Complex and the Blue Luminescence Band in GaN
    Reshchikov, Michael A., Andrieiev, Oleksandr,  Vorobiov, Mykhailo, McEwen, Ben, Shahedipour-Sandvik, Shadi, Ye, Dexian, and Demchenko, Denis O.
    Physica Status Solidi Oct 2021
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  3. JAP
    Defect-related photoluminescence from ammono GaN
    Reshchikov, MA, Vorobiov, M, Grabianska, K, Zajac, M, Iwinska, M, and Bockowski, M
    Journal of Applied Physics Mar 2021
  4. PhysRevLett
    Shallow and Deep States of Beryllium Acceptor in GaN: Why Photoluminescence Experiments Do Not Reveal Small Polarons for Defects in Semiconductors
    Demchenko, D. O.,  Vorobiov, M., Andrieiev, O., Myers, T. H., and Reshchikov, M. A.
    Phys. Rev. Lett. Jan 2021
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2020

  1. SciRep
    Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry
    Reshchikov, Michael A.,  Vorobiov, Mykhailo, Andrieiev, Oleksandr, K., Ding, Izyumskaya, N., Avrutin, V., Usikov, A., Helava, H., and Makarov, Yu.
    Sci Rep Feb 2020
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2018

  1. PhysRevB
    Two charge states of the \mathrmC_\mathrmN acceptor in GaN: Evidence from photoluminescence
    Reshchikov, M. A.,  Vorobiov, M., Demchenko, D. O., Özgür, Ü., ç\fi, H., Lesnik, A., Hoffmann, M. P., Hörich, F., Dadgar, A., and Strittmatter, A.
    Phys. Rev. B Sep 2018
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